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PMN50XP
P-channel TrenchMOS extremely low level FET
Rev. 01 -- 23 January 2006 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
s Low threshold voltage s Low on-state losses
1.3 Applications
s Low power DC-to-DC converters s Load switching s Battery management s Battery powered portable equipment
1.4 Quick reference data
s VDS -20 V s RDSon 60 m s ID -4.8 A s QGD = 1.3 nC (typ)
2. Pinning information
Table 1: Pin 1, 2, 5, 6 3 4 Pinning Description drain (D) gate (G) source (S)
1 2 3
G S
003aaa671
Simplified outline
6 5 4
Symbol
D
SOT457 (TSOP6)
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
3. Ordering information
Table 2: Ordering information Package Name PMN50XP TSOP6 Description plastic surface mounted package (TSOP6); 6 leads Version SOT457 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Parameter drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tsp = 25 C Tsp = 25 C; pulsed; tp 10 s Tsp = 25 C; VGS = -4.5 V; see Figure 2 and 3 Tsp = 100 C; VGS = -4.5 V; see Figure 2 Tsp = 25 C; pulsed; tp 10 s; see Figure 3 Tsp = 25 C; see Figure 1 Conditions 25 C Tj 150 C 25 C Tj 150 C; RGS = 20 k Min -55 -55 Max -20 -20 12 -4.8 -3 -19.4 2.2 +150 +150 -1.9 -7.5 Unit V V V A A A W C C A A
Source-drain diode
PMN50XP_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
2 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
120 Pder (%) 80
03aa17
120 Ider (%) 80
03aa25
40
40
0 0 50 100 150 Tsp (C) 200
0 0 50 100 150 Tsp (C) 200
P tot P der = ------------------------ x 100 % P
tot ( 25 C )
ID I der = -------------------- x 100 % I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature
-102 ID (A) -10
Fig 2. Normalized continuous drain current as a function of solder point temperature
001aae333
Limit RDSon = -VDS/-ID
tp = 10 s 100 s
1 ms -1 10 ms DC 100 ms -10-1 -10-1 -1 -10 VDS (V) -102
Tsp = 25 C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMN50XP_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
3 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
5. Thermal characteristics
Table 4: Rth(j-sp) Thermal characteristics Conditions see Figure 4 Min Typ Max 55 Unit K/W thermal resistance from junction to solder point Symbol Parameter
102 Zth(j-sp) (K/W) 10
03aq03
= 0.5 0.2 0.1 0.05
1
0.02
P
=
tp T
single pulse
tp T t
10-1 10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
PMN50XP_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
4 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown ID = -250 A; VGS = 0 V voltage Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = -0.25 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain leakage current VDS = -20 V; VGS = 0 V Tj = 25 C Tj = 70 C IGSS RDSon gate leakage current drain-source on-state resistance VGS = 12 V; VDS = 0 V VGS = -4.5 V; ID = -2.8 A; see Figure 6 and 8 Tj = 25 C Tj = 150 C VGS = -2.5 V; ID = -2.3 A; see Figure 6 and 8 Dynamic characteristics QG(tot) QGS QGD VGS(pl) Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain charge gate-source plateau voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage IS = -1.7 A; VGS = 0 V; see Figure 13 VDS = -10 V; RL = 10 ; VGS = -4.5 V; RG = 6 VGS = 0 V; VDS = -20 V; f = 1 MHz; see Figure 14 ID = -4.7 A; VDS = -10 V; VGS = -4.5 V; see Figure 11 and 12 10 2.2 1.3 -1.6 1020 140 100 8.5 7.5 82 35 -0.77 -1.2 nC nC nC V pF pF pF ns ns ns ns V 48 77 65 60 96 80 m m m -10 -1 -5 -100 A A nA -0.55 -0.35 -0.75 -0.95 -1.1 V V V -20 -18 V V Conditions Min Typ Max Unit
Source-drain diode
PMN50XP_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
5 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
-20 ID (A) -15
03aq04
VGS (V) = -4.5 -3.5
-3 -2.5
150 RDSon (m) 120
03aq05
VGS (V) = -2
-2.5 90 -2
-10 60 -5 -1.5 30
-3 -3.5 -4.5
0 0 -0.5 -1 -1.5 VDS (V) -2
0 0 -5 -10 -15 ID (A) -20
Tj = 25 C
Tj = 25 C
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values
03aq06
Fig 6. Drain-source on-state resistance as a function of drain current; typical values
2 a 1.5
03aq10
-20 ID (A) -15
-10
1
-5 Tj = 150 C 25 C
0.5
0 0 -1 -2 -3 VGS (V) -4
0 -60
0
60
120
Tj (C)
180
Tj = 25 C and 150 C; VDS > ID x RDSon
R DSon a = ----------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature
Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values
PMN50XP_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
6 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
-1.2 VGS(th) (V) -0.8
03ar95
-10-3 ID (A) -10-4 min typ
001aae334
max
typ
min
-10-5
max
-0.4
0 -60
0
60
120
Tj (C)
180
-10-6 0
-0.2
-0.4
-0.6
-0.8 -1.0 VGS (V)
ID = -0.25 mA; VDS = VGS
Tj = 25 C; VDS = -5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature
-5 VGS (V) -4 ID = -4.7 A Tj = 25 C VDS = -10 V
03aq09
Fig 10. Sub-threshold drain current as a function of gate-source voltage
VDS ID VGS(pl)
-3
-2
VGS(th)
-1
VGS QGS1 QGS2 QGD QG(tot)
003aaa508
0 0 4 8 QG (nC) 12
QGS
ID = -4.7 A; VDS = -10 V
Fig 11. Gate-source voltage as a function of gate charge; typical values
Fig 12. Gate charge waveform definitions
PMN50XP_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
7 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
-20 IS (A) -15
03aq07
104 C (pF) 103
001aae335
Ciss
-10 150 C Tj = 25 C
102 Coss Crss
-5
0 0 -0.4 -0.8 -1.2 VSD (V) -1.6
10 -10-1
-1
-10 VDS (V)
-102
Tj = 25 C and 150 C; VGS = 0 V
VGS = 0 V; f = 1 MHz
Fig 13. Source current as a function of source-drain voltage; typical values
Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
PMN50XP_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
8 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
7. Package outline
Plastic surface mounted package (TSOP6); 6 leads
SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A A1 c
1
2
3
Lp
e
bp
wM B detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC JEITA SC-74
EUROPEAN PROJECTION
ISSUE DATE 04-11-08 05-11-07
Fig 15. Package outline SOT457 (TSOP6)
PMN50XP_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
9 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
8. Revision history
Table 6: Revision history Release date 20060123 Data sheet status Change notice Doc. number Supersedes Product data sheet Document ID PMN50XP_1
PMN50XP_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
10 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
9. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
12. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
PMN50XP_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 23 January 2006
11 of 12
Philips Semiconductors
PMN50XP
P-channel TrenchMOS extremely low level FET
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11
(c) Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 January 2006 Document number: PMN50XP_1
Published in The Netherlands

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